The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2014

Filed:

Sep. 29, 2011
Applicants:

Shelby F. Nelson, Pittsford, NY (US);

Lee W. Tutt, Webster, NY (US);

Inventors:

Shelby F. Nelson, Pittsford, NY (US);

Lee W. Tutt, Webster, NY (US);

Assignee:

Eastman Kodak Company, Rochester, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78642 (2013.01);
Abstract

A method of producing a transistor includes providing a substrate including an electrically conductive material layer stack positioned on the substrate. A first electrically insulating material layer is deposited so that the first electrically insulating material layer contacts a first portion of the electrically conductive material layer stack. A second electrically insulating material layer is conformally deposited so that the second electrically insulating material contacts the first electrically insulating layer, and contacts a second portion of the electrically conductive material layer stack, and contacts at least a portion of the substrate.


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