The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2014
Filed:
Sep. 12, 2012
Joseph S. Newbury, Irvington, NY (US);
Kenneth Parker Rodbell, Sandy Hook, CT (US);
Zhen Zhang, Ossining, NY (US);
Yu Zhu, West Harrison, NY (US);
Joseph S. Newbury, Irvington, NY (US);
Kenneth Parker Rodbell, Sandy Hook, CT (US);
Zhen Zhang, Ossining, NY (US);
Yu Zhu, West Harrison, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Techniques for forming a smooth silicide without the use of a cap layer are provided. In one aspect, a FET device is provided. The FET device includes a SOI wafer having a SOI layer over a BOX and at least one active area formed in the wafer; a gate stack over a portion of the at least one active area which serves as a channel of the device; source and drain regions of the device adjacent to the gate stack, wherein the source and drain regions of the device include a semiconductor material selected from: silicon and silicon germanium; and silicide contacts to the source and drain regions of the device, wherein an interface is present between the silicide contacts and the semiconductor material, and wherein the interface has an interface roughness of less than about 5 nanometers.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile