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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8865513 B1

PDFFull Text
Date of Patent:
Oct. 21, 2014

Filed:

Jul. 02, 2010

High-density p-doped quantum dot solar cell obtained by the active doping of inp and a production method therefor

Applicants:

Kyung Joong Kim, Daejeon, KR;

Seung Hui Hong, Seoul, KR;

Jae Hee Park, Gyeonggi-do, KR;

Woo Lee, Daejeon, KR;

Inventors:

Kyung Joong Kim, Daejeon, KR;

Seung Hui Hong, Seoul, KR;

Jae Hee Park, Gyeonggi-do, KR;

Woo Lee, Daejeon, KR;

Assignee:

Korea Research Institute of Standards and Science, , KR;

Attorney:

Cantor Colburn LLP

Primary Examiner:

Mohsen Ahmadi

Assistant Examiner:

Abdulfattah Mustapha

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/18 (2006.01); H01L 31/0304 (2006.01); H01L 31/0352 (2006.01); H01L 31/06 (2012.01);
U.S. Cl.
CPC ...
H01L 31/1864 (2013.01); Y02E 10/544 (2013.01); H01L 31/03042 (2013.01); H01L 31/035218 (2013.01); H01L 31/06 (2013.01); H01L 31/184 (2013.01);
Abstract

Provided is a manufacturing method of a semiconductor quantum dot-sensitized solar cell. More particularly, the manufacturing method according to the present invention includes: a quantum dot forming step of forming a semiconductor layer containing a group 4 element and InP on a substrate and then performing heat-treatment on the substrate including the semiconductor layer formed thereon to remove indium (In) therefrom, thereby forming an n-type semiconductor quantum dot, which is a group 4 element quantum dot doped with phosphorus (P).

Find Patent Forward Citations

Kim, Kyung. (2014). High-density p-doped quantum dot solar cell obtained by the active doping of inp and a production method therefor (U.S. Patent No. 8865513). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8865513

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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