The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2014
Filed:
Jun. 10, 2010
Kathryn C. Fisher, Brooklyn, NY (US);
Nicholas C. M. Fuller, North Hills, NY (US);
Satyavolu S. Papa Rao, Poughkeepsie, NY (US);
Xiaoyan Shao, Yorktown Heights, NY (US);
Jeffrey Hedrick, Montvale, NJ (US);
Kathryn C. Fisher, Brooklyn, NY (US);
Nicholas C. M. Fuller, North Hills, NY (US);
Satyavolu S. Papa Rao, Poughkeepsie, NY (US);
Xiaoyan Shao, Yorktown Heights, NY (US);
Jeffrey Hedrick, Montvale, NJ (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The present disclosure provides a method of forming a back side surface field of a solar cell without utilizing screen printing. The method includes first forming a p-type dopant layer directly on the back side surface of the semiconductor substrate that includes a p/n junction utilizing an electrodeposition method. The p/n junction is defined as the interface that is formed between an n-type semiconductor portion of the substrate and an underlying p-type semiconductor portion of the substrate. The plated structure is then annealed to from a P++ back side surface field layer directly on the back side surface of the semiconductor substrate. Optionally, a metallic film can be electrodeposited on an exposed surface of the P++ back side surface layer.