The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2014
Filed:
Feb. 18, 2011
Yoshimi Tanimoto, Osaka, JP;
Takanori Sonoda, Osaka, JP;
Hideaki Ikeda, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;
Abstract
A compound semiconductor light-emitting element characterized by high transmittance of an electrically conductive film, low contact resistance and low sheet resistance of electrically conductive film is manufactured. The manufacturing method for a compound semiconductor light-emitting element of the present invention includes the steps of: forming a semiconductor layer formed of a group III nitride semiconductor, including a light-emitting layer on a substrate; forming an electrically conductive film on the side of the semiconductor layer opposite to the side contacting the substrate; conducting first annealing on the electrically conductive film in an atmosphere containing oxygen; conducting second annealing on the electrically conductive film in an atmosphere not containing oxygen; and exposing the electrically conductive film to atmospheric air between the step of conducting first annealing and the step of conducting second annealing.