The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2014

Filed:

Jun. 26, 2012
Applicants:

Takashi Igari, Shinjuku-ku, JP;

Kenya Abiko, Shinjuku-ku, JP;

Inventors:

Takashi Igari, Shinjuku-ku, JP;

Kenya Abiko, Shinjuku-ku, JP;

Assignee:

Hoya Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 17/06 (2006.01); C23C 14/34 (2006.01); C03B 23/00 (2006.01); B32B 7/02 (2006.01); C23C 14/10 (2006.01); C03B 11/08 (2006.01); C03C 17/34 (2006.01); C03B 11/14 (2006.01); C03C 17/23 (2006.01);
U.S. Cl.
CPC ...
C03B 11/08 (2013.01); C03C 2217/228 (2013.01); C03C 2217/22 (2013.01); C03C 17/3417 (2013.01); C03C 2217/229 (2013.01); C03C 2217/216 (2013.01); C03C 2217/212 (2013.01); C03B 11/14 (2013.01); C03B 2215/49 (2013.01); C03C 17/23 (2013.01); C03C 2217/213 (2013.01);
Abstract

A press molding glass material including: a core portion composed of optical glass; and a surface layer covering the core portion, wherein the surface layer includes an outermost layer contacting with a molding surface of a molding die in press molding and an intermediate layer adjacent to the outermost layer, the outermost layer is a silicon oxide film having a surface free energy measured by a three-solution method of equal to or less than 75 mJ/mand having a film thickness of less than 15 nm, and the intermediate layer is a film composed of a film material having a bond-radius difference from a silicon oxide based on a stoichiometric composition of more than 0.10 Å, wherein, in a case in which the bond-radius difference is more than 0.10 Å and equal to or less than 0.40 Å, a film thickness of the intermediate layer is equal to or less than 5 nm.


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