The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8865259 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 21, 2014

Filed:

Jun. 09, 2011
Applicants:

Piero Sferlazzo, Marblehead, MA (US);

Thomas Michael Lampros, Cambridge, NY (US);

Inventors:

Piero Sferlazzo, Marblehead, MA (US);

Thomas Michael Lampros, Cambridge, NY (US);

Assignee:

Singulus MOCVD GmbH I.GR., Kahl-AM Main, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/20 (2006.01); C23C 16/54 (2006.01); C23C 16/40 (2006.01); H01L 31/0749 (2012.01); H01L 31/032 (2006.01); C23C 16/30 (2006.01);
U.S. Cl.
CPC ...
C23C 16/54 (2013.01); Y02E 10/541 (2013.01); H01L 31/18 (2013.01); H01L 31/206 (2013.01); C23C 16/545 (2013.01); C23C 16/407 (2013.01); H01L 31/0749 (2013.01); H01L 31/0322 (2013.01); C23C 16/306 (2013.01);
Abstract

Disclosed are an inline chemical vapor deposition method and system for fabricating a device. The method includes transporting a web or discrete substrate through a deposition chamber having a plurality of deposition modules. A buffer layer, a window layer and a transparent conductive layer are deposited onto the substrate during passage through a first deposition module, a second deposition module and a third deposition module, respectively. Advantageously, the steps for generating the buffer layer, window layer and transparent conductive layer are performed sequentially in a common vacuum environment of a single deposition chamber and the use of a conventional chemical bath deposition process to deposit the buffer layer is eliminated. The method is suitable for the manufacture of different types of devices including various types of solar cells such as copper indium gallium diselenide solar cells.


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