The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2014
Filed:
Jun. 01, 2011
Kazuyoshi Honda, Osaka, JP;
Kunihiko Bessho, Osaka, JP;
Takashi Shimada, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
The present invention provides a thin film manufacturing method which realizes stable, highly-efficient film formation using a nozzle-type evaporation source while avoiding unnecessary scattering and deposition of a film formation material after the termination of the film formation. Used is a film forming apparatus including: an evaporation chamber; a film forming chamberin which a substrateis provided; an evaporation sourceholding a film formation materialand including an opening surface; a moving mechanismconfigured to cause the evaporation sourceto move; and a conductance variable structure. The film formation is performed in a state where the opening surfaceof the evaporation sourceholding the heated film formation material is located close to the substratewhile evacuating the evaporation chamberand the film forming chamberwithout shutting off communication between the evaporation chamberand the film forming chamberby the conductance variable structure. Next, the evaporation of the film formation material is suppressed by introducing a nonreactive gas to the evaporation chamberand the film forming chamberto adjust pressure in each chamber to predetermined pressure or more. Then, the evaporation sourceis moved by the moving mechanismsuch that the opening surfaceis located away from the substrate. The conductance variable structure is activated to shut off the communication between these chambers, and the film formation material is cooled while continuously introducing the nonreactive gas to the evaporation chamber