The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2014
Filed:
Apr. 28, 2009
Shriram Ramanathan, Acton, MA (US);
Dmitry Ruzmetov, Gaithersburg, MD (US);
Venkatesh Narayanamurti, Boston, MA (US);
Changhyun Ko, Cambridge, MA (US);
Shriram Ramanathan, Acton, MA (US);
Dmitry Ruzmetov, Gaithersburg, MD (US);
Venkatesh Narayanamurti, Boston, MA (US);
Changhyun Ko, Cambridge, MA (US);
President and Fellows of Harvard College, Cambridge, MA (US);
Abstract
Thin films of vanadium oxide having exceptionally high metal-insulator transition properties are synthesized by RF sputtering. An Al2O3 substrate is placed in a sputtering chamber and heated to a temperature up to about 550 degrees Celsius. Ar and O2 gases are introduced into the sputtering chamber at the flow values of about 92.2 sccm and about 7.8 sccm respectively. A voltage is applied to create a plasma in the chamber. A sputtering gun with vanadium target material is ignited and kept at a power of about 250 W. The phase transition parameters of vanadium dioxide thin films, synthesized by RF sputtering, are modulated by exposing the vanadium dioxide thin film to UV (ultraviolet) radiation so as to induce a change in oxygen incorporation of the vanadium dioxide thin film.