The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2014
Filed:
Mar. 20, 2006
Hidetoshi Kuroki, Kanagawa, JP;
Motoaki Yoshinaga, Kanagawa, JP;
Yutaka Shiraishi, Kanagawa, JP;
Masahiro Shibata, Kanagawa, JP;
Hidetoshi Kuroki, Kanagawa, JP;
Motoaki Yoshinaga, Kanagawa, JP;
Yutaka Shiraishi, Kanagawa, JP;
Masahiro Shibata, Kanagawa, JP;
Sumco Techxiv Kabushiki Kaisha, Kanagawa, JP;
Abstract
A method for producing a silicon wafer in which occurrence of slip starting from interstitial-type point defects is prevented in a part from the shoulder to the top of the straight cylinder portion of a silicon single crystal when the silicon single crystal is grown by pulling method under growth conditions entering an I-rich region. In order to prevent occurrence of slip in the range from the shoulder (A) to the top of the straight cylinder portion (B), the silicon single crystal () is pulled under conditions that the oxygen concentration Oi from the shoulder (A) to the top of the straight cylinder portion (B) of the silicon single crystal () is not lower than a predetermined concentration for preventing slip starting from interstitial-type point defects, more specifically not lower than 9.0×10atoms/cm.