The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2014
Filed:
Jul. 27, 2011
Applicants:
Takeshi Yamao, Ube, JP;
Michio Honda, Ube, JP;
Shinsuke Jida, Ube, JP;
Inventors:
Assignee:
Ube Industries, Ltd., Ube-shi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 11/00 (2006.01); B28B 7/36 (2006.01); C01B 21/068 (2006.01); C01B 33/02 (2006.01); C30B 29/06 (2006.01);
U.S. Cl.
CPC ...
B28B 7/36 (2013.01); C01B 21/068 (2013.01); C01B 33/02 (2013.01); C30B 11/002 (2013.01); C30B 29/06 (2013.01); C01P 2004/03 (2013.01); C01P 2004/61 (2013.01); C01P 2004/62 (2013.01); C01P 2006/12 (2013.01); C01P 2004/52 (2013.01); C01P 2006/80 (2013.01);
Abstract
Mold for casting a polycrystalline silicon ingot, and a silicon nitride powder for a mold release material thereof, a slurry containing a silicon nitride power for a mold release layer thereof, and a mold release material for casting thereof. The present invention relates to a silicon nitride powder for a mold release material of a mold for casting a polycrystalline silicon ingot characterized in that the percentage of primary particles of granular crystals monodispersed in powders is not less than 95% in terms of the area ratio calculated by analysis of an SEM image.