The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2014
Filed:
Mar. 15, 2013
Scott T. Becker, Scotts Valley, CA (US);
Michael C. Smayling, Fremont, CA (US);
Dhrumil Gandhi, Cupertino, CA (US);
Jim Mali, Morgan Hill, CA (US);
Carole Lambert, Campbell, CA (US);
Jonathan R. Quandt, San Jose, CA (US);
Daryl Fox, Campbell, CA (US);
Scott T. Becker, Scotts Valley, CA (US);
Michael C. Smayling, Fremont, CA (US);
Dhrumil Gandhi, Cupertino, CA (US);
Jim Mali, Morgan Hill, CA (US);
Carole Lambert, Campbell, CA (US);
Jonathan R. Quandt, San Jose, CA (US);
Daryl Fox, Campbell, CA (US);
Tela Innovations, Inc., Los Gatos, CA (US);
Abstract
A first gate level feature forms gate electrodes of a first finfet transistor of a first transistor type and a first finfet transistor of a second transistor type. A second gate level feature forms a gate electrode of a second finfet transistor of the first transistor type. A third gate level feature forms a gate electrode of a second finfet transistor of the second transistor type. The gate electrodes of the second finfet transistors of the first and second transistor types are electrically connected to each other. The gate electrodes of the second finfet transistors of the first and second transistor types are positioned on opposite sides of a gate electrode track along which the gate electrodes of the first finfet transistors of the first and second transistor types are positioned.