The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2014
Filed:
Jul. 19, 2010
Zhixiong LI, Guangdong, CN;
Enhua Deng, Guangdong, CN;
Dan Guo, Guangdong, CN;
Shenzhen Netcom Electronics Co., Ltd., Guangdong, CN;
Abstract
The present invention is adapted to data storage technology field, and provides a reading/writing control method and system for nonvolatile memory, the method including the following steps: dividing valid blocks in the nonvolatile memory into different zones, the zones including at least one data zone having fixed number of valid blocks and one exchange zone having at least two valid blocks; creating a mapping table of logic blocks and physical blocks in each zone; establishing a mapping table of logic pages and physical pages in the blocks based on redundant area information of pages in the blocks, and storing the mapping table of the logic blocks and physical blocks in each zone and the mapping table of logic pages and physical pages in each block in a private data area; and writing data segments in an idle page of the blocks of the data zones in sequence, or reading data segments from valid pages in the data zones, thus the data reading/writing speed and efficiency is promoted.