The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2014
Filed:
Mar. 14, 2012
Pierre-emmanuel Gaillardon, Romans, FR;
Giovanni Betti Beneventi, Rovigo, IT;
Luca Perniola, Noyarey, FR;
Pierre-Emmanuel Gaillardon, Romans, FR;
Giovanni Betti Beneventi, Rovigo, IT;
Luca Perniola, Noyarey, FR;
Commissariat a l'Energie Atomique et aux Energies Alternatives, Paris, FR;
Institut Polytechnique de Grenoble, Grenoble, FR;
Abstract
The present invention is a non-volatile memory cell containing at least two distinct memory zones, each formed in a resistivity-change material, the memory cell containing at least one heating element for each memory zone, each heating element having at least two ends, one of which is connected to a supply line and the other of which is brought into contact with the resistivity-change material, characterized in that the resistivity-change material is arranged in a single block common to each of the memory zones of the memory cell, so as to create distinct memory zones locally.