The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2014

Filed:

Sep. 16, 2011
Applicant:

Hiroshi Ito, Yokohama, JP;

Inventor:

Hiroshi Ito, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0007 (2013.01); G11C 2213/71 (2013.01); G11C 13/0064 (2013.01); G11C 2213/72 (2013.01); G11C 2013/0066 (2013.01); G11C 2013/0078 (2013.01); G11C 13/0002 (2013.01); G11C 13/0069 (2013.01);
Abstract

According to one embodiment, a nonvolatile semiconductor memory device comprises a memory cell which includes a variable resistance element and a current-limiting element that has a nonlinear current-voltage characteristic and a driver which changes the resistance of the variable resistance element by causing a first current to flow in the memory cell. In addition, the nonvolatile semiconductor memory device further comprises a detection module which detects a change in the resistance of the memory cell based on the magnitude of the first current and a current supplying module which causes a second current to flow in the detection module in place of the first current.


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