The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2014

Filed:

Dec. 13, 2011
Applicants:

Joon Sung Lee, Daejeon, KR;

Yong Sun Yoon, Daejeon, KR;

Inventors:

Joon Sung Lee, Daejeon, KR;

Yong Sun Yoon, Daejeon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/72 (2006.01); G01T 1/24 (2006.01); G01J 1/02 (2006.01); H01L 31/0232 (2014.01); G01T 1/20 (2006.01); G01J 1/04 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02327 (2013.01); G01T 1/248 (2013.01); G01J 1/0214 (2013.01); G01T 1/2002 (2013.01); G01J 1/0407 (2013.01); H01L 27/14627 (2013.01);
Abstract

Disclosed is an optical structure formed in an upper side of a semiconductor photomultiplier having a plurality of microcells. The optical structure includes: a first dielectric body formed in an upper side of a dead area between light receiving areas of the respective microcells and having a cross-sectional structure in which a lower side is wider than an upper side; and a second dielectric body formed in the upper side of the light receiving area of each microcell and having a cross-sectional structure in which a lower side is narrower than an upper side, and a refractive index of the second dielectric body is higher than that of the first dielectric body.


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