The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2014
Filed:
Jul. 05, 2012
Peter A. Dowben, Crete, NE (US);
Jinke Tang, Laramie, WY (US);
David Wisbey, Lafayette, CO (US);
Quantum Devices, LLC, Potomac, MD (US);
Abstract
Solid state neutron detection utilizing gadolinium as a neutron absorber is described. The new class of narrow-gap neutron-absorbing semiconducting materials, including Gd-doped HfO, Gd-doped EuO, Gd-doped GaN, GdOand GdN are included in three types of device structures: (1) a p-n heterostructure diode with a ˜30 μm Gd-loaded semiconductor grown on a conventional semiconductor (Si or B-doped Si); (2) a p-n junction or a p-i-n trilayer diode with a Gd-loaded semiconductoron one side and single-crystal semiconducting LiBOlayer on the other side of the heterojunction; and (3) a p-n junction or a p-i-n trilayer diode with a Gd-loaded semiconductoron on one side and a boron nitride (BN) semiconductor layer on the other side of the heterojunction.