The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2014
Filed:
Mar. 14, 2013
Applicant:
Seagate Technology Llc, Cupertino, CA (US);
Inventors:
Yuankai Zheng, Fremont, CA (US);
Xiaohua Lou, Milpitas, CA (US);
Wei Tian, Eden Prairie, MN (US);
Zheng Gao, San Jose, CA (US);
Haiwen Xi, San Jose, CA (US);
Assignee:
Seagate Technology LLC, Scotts Valley, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/02 (2006.01); G11C 11/16 (2006.01); H01F 41/30 (2006.01); H01L 43/10 (2006.01); H01L 43/08 (2006.01); H01L 43/12 (2006.01); H01F 10/30 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); G11C 11/161 (2013.01); H01F 41/307 (2013.01); H01L 43/10 (2013.01); G11C 11/1675 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01); H01F 10/30 (2013.01); G11C 11/1673 (2013.01);
Abstract
An apparatus and associated method for a non-volatile memory cell with a phonon-blocking insulating layer. In accordance with various embodiments, a magnetic stack has a tunnel junction, ferromagnetic free layer, pinned layer, and an insulating layer that is constructed of an electrically and thermally insulative material that blocks phonons while allowing electrical transmission through at least one conductive feature.