The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2014
Filed:
Jul. 09, 2012
Hideaki Kuroda, Kanagawa, JP;
Hideaki Kuroda, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A semiconductor device including a transistor formed on a first surface of a silicon layer; a first insulating film formed on the first surface of said silicon layer and covering said transistor; a wiring section formed in the first insulating film and electrically connected to the transistor; a supporting substrate formed on a surface of the first insulating film with a second insulating film interposed between the supporting substrate and the first insulating film; and an adjusting insulating film for adjusting a threshold voltage of said transistor, the adjusting insulating film being formed on a second surface of said silicon layer opposing the first surface of said silicon layer. Some embodiments may include a probing electrode electrically connected to the transistor and an opening in the silicon layer for exposing the probing electrode.