The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2014
Filed:
Jun. 08, 2012
Chongwu Zhou, Arcadia, CA (US);
Koungmin Ryu, Los Angeles, CA (US);
Alexander Badmaev, Hillsboro, OR (US);
Chuan Wang, Albany, CA (US);
Chongwu Zhou, Arcadia, CA (US);
Koungmin Ryu, Los Angeles, CA (US);
Alexander Badmaev, Hillsboro, OR (US);
Chuan Wang, Albany, CA (US);
University of Southern California, Los Angeles, CA (US);
Abstract
RF transistors are fabricated at complete wafer scale using a nanotube deposition technique capable of forming high-density, uniform semiconducting nanotube thin films at complete wafer scale, and electrical characterization reveals that such devices exhibit gigahertz operation, linearity, and large transconductance and current drive.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile