The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2014
Filed:
Jun. 08, 2012
Applicants:
Chongwu Zhou, Arcadia, CA (US);
Koungmin Ryu, Los Angeles, CA (US);
Alexander Badmaev, Hillsboro, OR (US);
Chuan Wang, Albany, CA (US);
Inventors:
Chongwu Zhou, Arcadia, CA (US);
Koungmin Ryu, Los Angeles, CA (US);
Alexander Badmaev, Hillsboro, OR (US);
Chuan Wang, Albany, CA (US);
Assignee:
University of Southern California, Los Angeles, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 51/00 (2006.01); H01L 51/05 (2006.01); H01L 29/66 (2006.01); B82Y 40/00 (2011.01); H01L 29/775 (2006.01); B82Y 10/00 (2011.01);
U.S. Cl.
CPC ...
H01L 29/775 (2013.01); H01L 51/0003 (2013.01); H01L 51/0048 (2013.01); H01L 51/0541 (2013.01); B82Y 10/00 (2013.01); H01L 29/66477 (2013.01); B82Y 40/00 (2013.01);
Abstract
RF transistors are fabricated at complete wafer scale using a nanotube deposition technique capable of forming high-density, uniform semiconducting nanotube thin films at complete wafer scale, and electrical characterization reveals that such devices exhibit gigahertz operation, linearity, and large transconductance and current drive.