The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2014
Filed:
May. 30, 2008
Masaru Takaishi, Kyoto, JP;
Masaru Takaishi, Kyoto, JP;
Rohm Co., Ltd., Kyoto, JP;
Abstract
Provided is a semiconductor device in which on-resistance is largely reduced. The semiconductor device includes an n type epitaxial layer in which each region between neighboring trenches becomes a channel, and a plurality of embedded electrodes each of which is formed on an inner surface of each trench via a silicon oxide film. By blocking each region between neighboring trenches with every depletion layer formed around each of trenches, current flowing through each region between the neighboring trenches is interrupted. By deleting every depletion layer formed around each of the trenches, current can flow through each region between the neighboring trenches.
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