The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2014
Filed:
Sep. 05, 2012
Applicants:
Min-soo Kim, Gyeonggi-do, KR;
Dong-sun Sheen, Gyeonggi-do, KR;
Seung-ho Pyi, Gyeonggi-do, KR;
Sung-jin Whang, Gyeonggi-do, KR;
Inventors:
Min-Soo Kim, Gyeonggi-do, KR;
Dong-Sun Sheen, Gyeonggi-do, KR;
Seung-Ho Pyi, Gyeonggi-do, KR;
Sung-Jin Whang, Gyeonggi-do, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/283 (2006.01);
U.S. Cl.
CPC ...
Abstract
A nonvolatile memory device includes a substrate including a surface, a channel layer formed on the surface of the substrate, which protrudes perpendicularly from the surface, and a plurality of interlayer dielectric layers and a plurality of gate electrode layers alternately stacked along the channel layer, wherein the plurality of gate electrode layers protrude from the plurality of interlayer dielectric layers.