The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2014

Filed:

Aug. 25, 2009
Applicants:

Takeshi Sakaguchi, Kawasaki, JP;

Hiroyuki Nitta, Yokohama, JP;

Inventors:

Takeshi Sakaguchi, Kawasaki, JP;

Hiroyuki Nitta, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 27/115 (2006.01); H01L 21/3213 (2006.01); H01L 27/02 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11519 (2013.01); H01L 27/11521 (2013.01); H01L 21/32139 (2013.01); H01L 27/11524 (2013.01); H01L 27/0207 (2013.01); H01L 21/3086 (2013.01);
Abstract

A nonvolatile semiconductor memory of an aspect of the present invention including a plurality of first active areas which are provided in the memory cell array side-by-side in a first direction and which have a dimension smaller than a fabrication limit dimension obtained by lithography, a second active area provided between the first active areas adjacent in the first direction, a memory cell unit which is provided in each of the plurality of first active areas and which has memory cells and select transistors, and a linear contact which is connected to one end of the memory cell unit and which extends in the first direction, wherein an area in which the linear contact is provided is one semiconductor area to which the plurality of first active areas are connected by the plurality of second active areas, and the bottom surface of the linear contact is planar.


Find Patent Forward Citations

Loading…