The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2014
Filed:
Jun. 29, 2012
Satoshi Sasaki, Takasaki, JP;
Yasunari Umemoto, Sayama, JP;
Yasuo Osone, Kasumigaura, JP;
Tsutomu Kobori, Takasaki, JP;
Chushiro Kusano, Niiza, JP;
Isao Ohbu, Sagamihara, JP;
Kenji Sasaki, Takasaki, JP;
Satoshi Sasaki, Takasaki, JP;
Yasunari Umemoto, Sayama, JP;
Yasuo Osone, Kasumigaura, JP;
Tsutomu Kobori, Takasaki, JP;
Chushiro Kusano, Niiza, JP;
Isao Ohbu, Sagamihara, JP;
Kenji Sasaki, Takasaki, JP;
Murata Manufacturing Co., Ltd., Nagaokakyo-shi, Kyoto, JP;
Abstract
A technology which allows a reduction in the thermal resistance of a semiconductor device used in a radio communication device, and the miniaturization thereof is provided. For example, the semiconductor device can include a plurality of unit transistors Q, transistor formation regions, andeach having a first number (e.g., seven) of the unit transistors Q, and transistor formation regionsandeach having a second number (e.g., four) of the unit transistors Q. The transistor formation regionsandare located between the transistor formation regions, and, and the first number is larger than the second number.