The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2014
Filed:
Apr. 09, 2012
Young Hwan Park, Seoul, KR;
Woo Chul Jeon, Gyeonggi-do, KR;
Ki Yeol Park, Gyeonggi-do, KR;
Seok Yoon Hong, Gyeonggi-do, KR;
Young Hwan Park, Seoul, KR;
Woo Chul Jeon, Gyeonggi-do, KR;
Ki Yeol Park, Gyeonggi-do, KR;
Seok Yoon Hong, Gyeonggi-do, KR;
Samsung Electro-Mechanics Co., Ltd., Gyunggi-Do, KR;
Abstract
The present invention relates to a nitride semiconductor device and a manufacturing method thereof. According to one aspect of the present invention, a nitride semiconductor device including: a nitride semiconductor layer having a 2DEG channel; a source electrode in ohmic contact with the nitride semiconductor layer; a drain electrode in ohmic contact with the nitride semiconductor layer; a plurality of p-type nitride semiconductor segments formed on the nitride semiconductor layer and each formed lengthways from a first sidewall thereof, which is spaced apart from the source electrode, to a drain side; and a gate electrode formed to be close to the source electrode and in contact with the nitride semiconductor layer between the plurality of p-type semiconductor segments and portions of the p-type semiconductor segments extending in the direction of a source-side sidewall of the gate electrode aligned with the first sidewalls of the p-type nitride semiconductor segments is provided.