The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2014

Filed:

Jul. 18, 2012
Applicants:

Meng-hsin Yeh, Xiamen, CN;

Jyh-chiamg Wu, Xiamen, CN;

Shao-hua Huang, Xiamen, CN;

Chi-lun Chou, Xiamen, CN;

Hsing-wei LU, Xiamen, CN;

Kechuang Lin, Xiamen, CN;

Inventors:

Meng-hsin Yeh, Xiamen, CN;

Jyh-Chiamg Wu, Xiamen, CN;

Shao-hua Huang, Xiamen, CN;

Chi-lun Chou, Xiamen, CN;

Hsing-wei Lu, Xiamen, CN;

Kechuang Lin, Xiamen, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/02 (2010.01); H01L 33/32 (2010.01); H01L 33/14 (2010.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 33/14 (2013.01); H01L 33/32 (2013.01); H01L 33/007 (2013.01); H01L 33/145 (2013.01); H01L 33/025 (2013.01);
Abstract

A nitride light-emitting diode is provided including a current spreading layer. The current spreading layer includes a first layer having a plurality of distributed insulating portions configured to have electrical current flow therebetween; and a second layer including interlaced at least one substantially undoped nitride semiconductor layer and at least one n-type nitride semiconductor layer configured to spread laterally the electrical current from the first layer.


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