The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2014
Filed:
May. 14, 2009
Byoung-kwon Choo, Hwaseong-si, KR;
Joon-hoo Choi, Seoul, KR;
Kyu-sik Cho, Suwon-si, KR;
Seung-kyu Park, Hwaseong-si, KR;
Yong-hwan Park, Seoul, KR;
Sang-ho Moon, Seoul, KR;
Byoung-Kwon Choo, Hwaseong-si, KR;
Joon-Hoo Choi, Seoul, KR;
Kyu-Sik Cho, Suwon-si, KR;
Seung-Kyu Park, Hwaseong-si, KR;
Yong-Hwan Park, Seoul, KR;
Sang-Ho Moon, Seoul, KR;
Samsung Display Co., Ltd., Yongin, Gyeonggi-do, KR;
Abstract
A thin film transistor substrate that includes a substrate, first and second gate electrodes that are formed on the substrate, a gate insulating layer that is formed on the first and second gate electrodes, a first semiconductor and a second semiconductor that are formed on the gate insulating layer, and that overlap the first gate electrode and the second gate electrode, respectively, a first source electrode and a first drain electrode that are formed on the first semiconductor, and positioned opposed to and spaced from each other, a source electrode connected to the first drain electrode and a second drain electrode positioned opposed to and spaced from the second source electrode, wherein the second source and second drain electrodes are formed on the second semiconductor, and a pixel electrode that is electrically connected to the second drain electrode, a method of manufacturing the same, and a display apparatus having the same.