The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2014

Filed:

Dec. 06, 2012
Applicant:

Korea Research Institute of Standards and Science, Daejeon, KR;

Inventors:

Dal Hyoun Kim, Daejeon, KR;

Hwack Joo Lee, Daejeon, KR;

Sang Jung Ahn, Daejeon, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
A61N 5/00 (2006.01); G21G 5/00 (2006.01); B82B 3/00 (2006.01); H01J 37/317 (2006.01);
U.S. Cl.
CPC ...
H01J 37/317 (2013.01); B82B 3/0023 (2013.01); B82B 3/0076 (2013.01); Y10S 977/901 (2013.01); Y10S 977/84 (2013.01); Y10S 977/842 (2013.01);
Abstract

The movement-free bending method means the one of deformation methods for a one- or two-dimensional nanostructures using an ion beam capable of bending and deforming them and furthermore, changing a bending direction without requiring a motion such as a rotation of the nanostructures. The present invention affords a movement-free bending method for deforming the nanostructurehaving the one-dimensional or two-dimensional shape by irradiating the ion beam, wherein a bending direction of the nanostructureis controlled depending on energy of the ion beamor a thickness of the nanostructure


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