The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2014
Filed:
Sep. 30, 2008
Arnaud Peizerat, Grenoble, FR;
Marc Arques, Grenoble, FR;
Jean-luc Martin, Saint Geoire en Valdaine, FR;
Arnaud Peizerat, Grenoble, FR;
Marc Arques, Grenoble, FR;
Jean-Luc Martin, Saint Geoire en Valdaine, FR;
Commissariat a l'Energie Atomique, Paris, FR;
Abstract
A matrix microelectronic device includes elementary cells laid out according to a matrix. Each cell has a current source formed by a current source transistor. A source electrode of the transistor is connected to a source biasing conductor line of a plurality of source biasing conductor lines. A gate electrode of the transistor is connected to a gate biasing conductor line of a plurality of gate biasing conductor lines. A biasing device biases the gate biasing conductor lines and includes at least one first connection line that is connected to at least several of the gate biasing conductor lines. The biasing device includes a voltage generator or a current generator that causes a variation of potentials along the first connection line, thereby compensating a corresponding variation of potentials along the source biasing conductor lines. The device can include an addressing circuit for addressing horizontal lines or rows of the matrix.