The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8859944 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 14, 2014

Filed:

Sep. 07, 2010
Applicants:

Munir Eldesouki, Hamilton, CA;

Mohamed Jamal Deen, Dundas, CA;

Qiyin Fang, Grimsby, CA;

Inventors:

Munir Eldesouki, Hamilton, CA;

Mohamed Jamal Deen, Dundas, CA;

Qiyin Fang, Grimsby, CA;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 40/14 (2006.01); H04N 5/3745 (2011.01); H04N 5/353 (2011.01); H01L 27/144 (2006.01);
U.S. Cl.
CPC ...
H04N 5/3745 (2013.01); H04N 5/3535 (2013.01); H01L 27/1446 (2013.01);
Abstract

A method and apparatus of coordinated in-pixel light detection is provided. In one aspect, the method includes implementing an N-number of avalanche photodiodes inside a pixel circuit of a light detection circuit. The method also includes coordinating an output of the N-number of avalanche photodiodes through a counter circuit. The method further includes reducing a deadtime of the light detection circuit by a factor of 'N' through the N-number of avalanche photodiodes and the counter circuit operating in concert. The method furthermore includes measuring an intensity of a light through the light detection circuit. N-number of avalanche photodiodes is in a common well of a semiconductor technology. N-number of avalanche photodiodes is fabricated on a deep submicron semiconductor technology. A fill factor of the pixel circuit improves and a deadtime reduces through fabrication of the avalanche photodiodes in a common well. Also, a photon count rate increases through reducing the deadtime.


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Eldesouki, Munir. (2014). Coordinated in-pixel light detection method and apparatus (U.S. Patent No. 8859944). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8859944

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