The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2014
Filed:
Mar. 28, 2013
International Business Machines Corporation, Armonk, NY (US);
Taiwan Bluestone Technology Ltd., Tainan, TW;
Karlsruhe Institute of Technology, Eggenstein-Leopoldshafen, DE;
Phaedon Avouris, Yorktown Heights, NY (US);
Christos Dimitrakopoulos, Baldwin Place, NY (US);
Damon B. Farmer, White Plains, NY (US);
Mathias B. Steiner, New York, NY (US);
Michael Engel, Karlsruhe, DE;
Ralph Krupke, Stutensee-Blankenloch, DE;
Yu-Ming Lin, West Harrison, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor device includes a substrate having at least one electrically insulating portion. A first graphene electrode is formed on a surface of the substrate such that the electrically insulating portion is interposed between a bulk portion of the substrate and the first graphene electrode. A second graphene electrode formed on the surface of the substrate. The electrically insulating portion of the substrate is interposed between the bulk portion of the substrate and the second graphene electrode. The second graphene electrode is disposed opposite the first graphene electrode to define an exposed substrate area therebetween.