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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8859426 B1

PDFFull Text
Date of Patent:
Oct. 14, 2014

Filed:

Jul. 10, 2008

Semiconductor device and manufacturing method thereof

Applicant:

Kazuhide Abe, Tokyo, JP;

Inventor:

Kazuhide Abe, Tokyo, JP;

Assignee:

Lapis Semiconductor Co., Ltd., Yokohama, JP;

Attorney:

Volentine & Whitt, PLLC

Primary Examiner:

Long Pham

Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/288 (2006.01); H01L 21/311 (2006.01); H01L 21/321 (2006.01); H01L 21/3213 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76844 (2013.01); H01L 21/2885 (2013.01); H01L 21/31116 (2013.01); H01L 21/3212 (2013.01); H01L 21/32135 (2013.01); H01L 21/32136 (2013.01); H01L 21/76801 (2013.01); H01L 21/76802 (2013.01); H01L 21/76807 (2013.01); H01L 21/76831 (2013.01); H01L 21/76834 (2013.01); H01L 21/76849 (2013.01); H01L 21/76852 (2013.01); H01L 21/76865 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 23/53238 (2013.01); H01L 23/53295 (2013.01);
Abstract

A semiconductor device has a semiconductor substrate, a first insulating film formed on a surface of the semiconductor substrate, a first recess formed in the first insulating film, a first barrier film formed on an inner surface of the first insulating film except a top peripheral region of the first trench, a first conductive film formed in the first trench, and a covering film formed on an upper surface and a top peripheral region of the first conductive film and an upper surface of the first barrier film. The first conductive film includes copper.

Find Patent Forward Citations

Abe, Kazuhide. (2014). Semiconductor device and manufacturing method thereof (U.S. Patent No. 8859426). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8859426

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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