The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2014
Filed:
Feb. 29, 2008
Applicants:
Sung-soo Park, Seongnam-si, KR;
June-key Lee, Seongnam-si, KR;
Inventors:
Sung-soo Park, Seongnam-si, KR;
June-key Lee, Seongnam-si, KR;
Assignee:
Samsung Corning Precision Materials Co., Ltd., Gyeongsangbuk-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 21/02 (2006.01); H01L 33/00 (2010.01); H01L 33/12 (2010.01); H01L 33/20 (2010.01);
U.S. Cl.
CPC ...
H01L 21/02381 (2013.01); H01L 21/02488 (2013.01); H01L 33/007 (2013.01); H01L 21/0254 (2013.01); H01L 21/02639 (2013.01); H01L 33/20 (2013.01); H01L 21/02645 (2013.01); H01L 21/02491 (2013.01); H01L 33/12 (2013.01);
Abstract
Example embodiments are directed to a method of growing GaN single crystals on a silicon substrate, a method of manufacturing a GaN-based light emitting device using the silicon substrate, and a GaN-based light emitting device. The method of growing the GaN single crystals may include forming a buffer layer including a TiN group material or other like material on a silicon substrate, forming a nano-pattern including silicon oxide on the buffer layer, and growing GaN single crystals on the buffer layer and the nano-pattern.