The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2014
Filed:
May. 06, 2011
Akira Ohmae, Kanagawa, JP;
Michinori Shiomi, Kanagawa, JP;
Noriyuki Futagawa, Kanagawa, JP;
Takaaki Ami, Kanagawa, JP;
Takao Miyajima, Kanagawa, JP;
Yuuji Hiramatsu, Kanagawa, JP;
Izuho Hatada, Kanagawa, JP;
Nobutaka Okano, Kanagawa, JP;
Shigetaka Tomiya, Kanagawa, JP;
Katsunori Yanashima, Kanagawa, JP;
Tomonori Hino, Kanagawa, JP;
Hironobu Narui, Kanagawa, JP;
Akira Ohmae, Kanagawa, JP;
Michinori Shiomi, Kanagawa, JP;
Noriyuki Futagawa, Kanagawa, JP;
Takaaki Ami, Kanagawa, JP;
Takao Miyajima, Kanagawa, JP;
Yuuji Hiramatsu, Kanagawa, JP;
Izuho Hatada, Kanagawa, JP;
Nobutaka Okano, Kanagawa, JP;
Shigetaka Tomiya, Kanagawa, JP;
Katsunori Yanashima, Kanagawa, JP;
Tomonori Hino, Kanagawa, JP;
Hironobu Narui, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.