The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2014

Filed:

Nov. 30, 2009
Applicants:

Roger A. Fratti, Shillington, PA (US);

Warren K. Waskiewicz, Clinton, NJ (US);

Inventors:

Roger A. Fratti, Shillington, PA (US);

Warren K. Waskiewicz, Clinton, NJ (US);

Assignee:

Agere Systems LLC, Allentown, PA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01); H01L 21/306 (2006.01); H01L 23/31 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66234 (2013.01); H01L 2924/3511 (2013.01); H01L 2924/0002 (2013.01); H01L 21/30625 (2013.01); H01L 23/3171 (2013.01); H01L 29/66363 (2013.01); H01L 2924/3011 (2013.01);
Abstract

Techniques for processing power transistor devices are provided. In one aspect, the curvature of a power transistor device comprising a device film formed on a substrate is controlled by thinning the substrate, the device having an overall residual stress attributable at least in part to the thinning step, and applying a stress compensation layer to a surface of the device film, the stress compensation layer having a tensile stress sufficient to counterbalance at least a portion of the overall residual stress of the device. The resultant power transistor device may be part of an integrated circuit.


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