The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2014
Filed:
Jun. 16, 2011
Michael J. Ries, St. Charles, MO (US);
Dale A. Witte, Wentzville, MO (US);
Anca Stefanescu, St. Charles, MO (US);
Andrew M. Jones, Wildwood, MO (US);
Michael J. Ries, St. Charles, MO (US);
Dale A. Witte, Wentzville, MO (US);
Anca Stefanescu, St. Charles, MO (US);
Andrew M. Jones, Wildwood, MO (US);
SunEdison Semiconductor Limited, St. Peters, MO (US);
Abstract
Methods and systems are disclosed for performing a passivation process on a silicon-on-insulator wafer in a chamber in which the wafer is cleaved. A bonded wafer pair is cleaved within the chamber to form the silicon-on-insulator (SOI) wafer. A cleaved surface of the SOI wafer is then passivated in-situ by exposing the cleaved surface to a passivating substance. This exposure to a passivating substance results in the formation of a thin layer of oxide on the cleaved surface. The silicon-on-insulator wafer is then removed from the chamber. In other embodiments, the silicon-on-insulator wafer is first transferred to an adjoining chamber where the wafer is then passivated. The wafer is transferred to the adjoining chamber without exposing the wafer to the atmosphere outside the chambers.