The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2014
Filed:
Mar. 20, 2012
Youn-soo Kim, Yongin-si, KR;
Jae-hyoung Choi, Hwaseong-si, KR;
Kyu-ho Cho, Hwaseong-si, KR;
Wan-don Kim, Yongin-si, KR;
Jae-soon Lim, Seoul, KR;
Sang-yeol Kang, Seoul, KR;
Youn-soo Kim, Yongin-si, KR;
Jae-hyoung Choi, Hwaseong-si, KR;
Kyu-ho Cho, Hwaseong-si, KR;
Wan-don Kim, Yongin-si, KR;
Jae-soon Lim, Seoul, KR;
Sang-yeol Kang, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor device having a dielectric layer with improved electrical characteristics and associated methods, the semiconductor device including a lower metal layer, a dielectric layer, and an upper metal layer sequentially disposed on a semiconductor substrate and an insertion layer disposed between the dielectric layer and at least one of the lower metal layer and the upper metal layer, wherein the dielectric layer includes a metal oxide film and the insertion layer includes a metallic material film.