The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2014
Filed:
Feb. 07, 2013
Seiko Instruments Inc., Chiba, JP;
Yukimasa Minami, Chiba, JP;
Seiko Instruments Inc., , JP;
Abstract
Provided is a semiconductor device having a vertical MOS transistor and a method of manufacturing the same. The vertical MOS transistor has a trench gate, a distance between a gate electrode and an N-type high concentration buried layer below the gate electrode is formed longer than that in the conventional structure, and a P-type trench bottom surface lower region () is formed therebetween. In this manner, when a high voltage is applied to a drain region and 0 V is applied to the gate electrode, the trench bottom surface lower region () is depleted, thereby increasing the breakdown voltage in the OFF state.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile