The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2014
Filed:
Sep. 04, 2012
Applicant:
Derya Deniz, Delmar, NY (US);
Inventor:
Derya Deniz, Delmar, NY (US);
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28008 (2013.01); H01L 29/66545 (2013.01); H01L 21/823842 (2013.01); H01L 21/823878 (2013.01); H01L 21/28194 (2013.01); H01L 27/092 (2013.01); H01L 21/28088 (2013.01); H01L 29/4966 (2013.01);
Abstract
Approaches are provided for forming a semiconductor device (e.g., a FET) having a multi-function layer (e.g., niobium carbide (NbC)) that serves as a work function layer and a gate metal layer in gate stacks of solid state applications. By introducing a single layer with multiple functions, total number of layers that needs processing (e.g., recessing) may be decreased. As such, the complexity of device integration and resulting complications may be reduced.