The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2014

Filed:

Oct. 26, 2011
Applicants:

Juergen Steiger, Duesseldorf, DE;

Duy VU Pham, Oberhausen, DE;

Heiko Thiem, Bensheim, DE;

Alexey Merkulov, Ludwigshafen, DE;

Arne Hoppe, Herne, DE;

Inventors:

Juergen Steiger, Duesseldorf, DE;

Duy Vu Pham, Oberhausen, DE;

Heiko Thiem, Bensheim, DE;

Alexey Merkulov, Ludwigshafen, DE;

Arne Hoppe, Herne, DE;

Assignee:

Evonik Degussa GmbH, Essen, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/16 (2006.01); H01L 29/10 (2006.01); H01L 21/12 (2006.01); B05D 5/12 (2006.01); H01L 21/288 (2006.01); H01L 29/22 (2006.01); C23C 18/12 (2006.01); H01L 21/02 (2006.01); H01L 29/43 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02628 (2013.01); H01L 21/288 (2013.01); H01L 29/22 (2013.01); C23C 18/1216 (2013.01); H01L 29/43 (2013.01);
Abstract

The present invention relates to a liquid phase process for producing indium oxide-containing layers, in which a coating composition preparable from a mixture comprising at least one indium oxide precursor and at least one solvent and/or dispersion medium, in the sequence of points a) to d), a) is applied to a substrate, and b) the composition applied to the substrate is irradiated with electromagnetic radiation, c) optionally dried and d) converted thermally into an indium oxide-containing layer, where the indium oxide precursor is an indium halogen alkoxide of the generic formula InX(OR)where R is an alkyl radical and/or alkoxyalkyl radical and X is F, Cl, Br or I and the irradiation is carried out with electromagnetic radiation having significant fractions of radiation in the range of 170-210 nm and of 250-258 nm, to the indium oxide-containing layers producible with the process, and the use thereof.


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