The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2014
Filed:
Jun. 06, 2011
Applicants:
Shinichi Ushikura, Kanagawa, JP;
Mao Katsuhara, Kanagawa, JP;
Inventors:
Shinichi Ushikura, Kanagawa, JP;
Mao Katsuhara, Kanagawa, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 51/40 (2006.01); H01L 51/05 (2006.01); H01L 51/52 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0512 (2013.01); H01L 51/0055 (2013.01); H01L 51/52 (2013.01); H01L 51/0562 (2013.01);
Abstract
A thin film transistor including a contact layer that contains an organic semiconductor layer over a substrate, a contact layer containing an organic semiconductor material, an acceptor or donor material provided between an organic semiconductor layer, and a source electrode and a drain electrode at opposite end portions of the contact layer; and a method of fabricating same.