The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2014

Filed:

Sep. 12, 2012
Applicants:

Sang Hoon Kim, Daejeon, KR;

Gyungock Kim, Daejeon, KR;

IN Gyoo Kim, Daejeon, KR;

Jiho Joo, Goyang, KR;

Ki Seok Jang, Daejeon, KR;

Inventors:

Sang Hoon Kim, Daejeon, KR;

Gyungock Kim, Daejeon, KR;

In Gyoo Kim, Daejeon, KR;

JiHo Joo, Goyang, KR;

Ki Seok Jang, Daejeon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods of forming photo detectors are provided. The method includes providing a semiconductor layer on a substrate, forming a trench in the semiconductor layer, forming a first single crystalline layer and a second single crystalline layer using a selective single crystalline growth process in the trench, and patterning the first and second single crystalline layers and the semiconductor layer to form a first single crystalline pattern, a second single crystalline pattern and an optical waveguide.


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