The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2014

Filed:

May. 07, 2010
Applicants:

Afshin Ziaei, Vanves, FR;

Matthieu Le Baillif, Orsay, FR;

Inventors:

Afshin Ziaei, Vanves, FR;

Matthieu Le Baillif, Orsay, FR;

Assignee:

Thales, Neuilly Sur Seine, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/14 (2006.01); B81C 1/00 (2006.01); H01H 59/00 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00246 (2013.01); H01H 59/0009 (2013.01); B81C 2203/0735 (2013.01); B81B 2201/016 (2013.01);
Abstract

Methods of fabrication of electronic modules comprise, on the one hand, power electronic components fabricated on a substrate made of gallium nitride (GaN) and, on the other hand, micro-switches using electrostatic activation of the MEMS (Micro Electro Mechanical System) type. The electronic components and the micro-switches are fabricated on a single gallium nitride substrate and the fabrication method comprises at least the following steps: fabrication of the power components on the gallium nitride substrate; deposition of a first common passivation layer on said components and on the substrate; fabrication of the micro-switches on said substrate.


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