The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2014

Filed:

Dec. 05, 2012
Applicant:

Industrial Technology Research Institute, Hsinchu, TW;

Inventors:

Yu Sheng Hsieh, Hsinchu County, TW;

Jing Yuan Lin, Taipei County, TW;

Shang Chian Su, Taipei County, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/84 (2006.01); B81C 1/00 (2006.01); H01L 41/113 (2006.01); G01N 33/00 (2006.01); G01N 27/04 (2006.01); G01N 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/84 (2013.01); B81C 1/00158 (2013.01); H01L 41/1136 (2013.01); G01N 33/0036 (2013.01); B81C 1/00182 (2013.01); B81C 1/0019 (2013.01); G01N 27/04 (2013.01); G01N 27/128 (2013.01);
Abstract

A gas sensor manufacturing method comprises the following steps: providing a SOI substrate, including an oxide layer, a device layer, and a carrier, wherein the oxide layer is disposed between the device layer and the carrier; etching the device layer to form an integrated circuit region, an outer region, a trench and at least one conducting line; coating or imprinted a sensing material on the integrated circuit region; and etching the carrier and the oxide layer to form a cavity up to the gap so as to form a film structure which is suspended in the cavity by the cantilevered connecting arm.


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Hsieh, Yu. (2014). Gas sensor and manufacturing method thereof (U.S. Patent No. 8859317). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8859317

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