Method for manufacturing semiconductor light emitting element, semiconductor light emitting element, lamp, electronic device and mechanical apparatus

Abstract

A method for manufacturing a semiconductor light emitting element () which includes a first step of forming a first n-type semiconductor layer () on a substrate () and a second step of sequentially forming a regrowth layer () of the first n-type semiconductor layer (), a second n-type semiconductor layer (), a light emitting layer (), and a p-type semiconductor layer () on the first n-type semiconductor layer (). In the step of forming the second n-type semiconductor layer (), a step (1) of supplying Si less than that forming the regrowth layer () as a dopant to form a first layer of the second n-type semiconductor layer and a step (2) of supplying the Si more than that in the step (1) to form a second layer of the second n-type semiconductor layer are performed in this order.