The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2014
Filed:
Dec. 28, 2012
Tsinghua University, Beijing, CN;
Hon Hai Precision Industry Co., Ltd., New Taipei, TW;
Jun Zhu, Beijing, CN;
Hao-Su Zhang, Beijing, CN;
Qun-Qing Li, Beijing, CN;
Guo-Fan Jin, Beijing, CN;
Shou-Shan Fan, Beijing, CN;
Tsinghua University, Beijing, CN;
Hon Hai Precision Industry Co., Ltd., New Taipei, TW;
Abstract
A method for making a light emitting diode is provided. In the method, a substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer are grown on the epitaxial growth surface in series. The first semiconductor layer, the active layer, and the second semiconductor layer constitute a source layer. A metallic plasma generating layer is then formed on a surface of the source layer away from the substrate. A first optical symmetric layer is then disposed on a surface of the metallic plasma generating layer. A first electrode is applied on an exposed surface of the first semiconductor layer. A second electrode is applied to electrically connect with the second semiconductor layer.