The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2014
Filed:
Mar. 27, 2013
Applicant:
Ngk Insulators, Ltd., Nagoya, JP;
Inventors:
Assignee:
NGK Insulators, Ltd., Nagoya, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C04B 35/565 (2006.01); F01N 3/20 (2006.01); B01J 32/00 (2006.01); C04B 35/63 (2006.01); C04B 38/00 (2006.01); C04B 35/626 (2006.01); B01J 35/04 (2006.01); C04B 111/00 (2006.01); F01N 3/28 (2006.01); B01J 27/224 (2006.01);
U.S. Cl.
CPC ...
C04B 38/0006 (2013.01); C04B 2111/0081 (2013.01); C04B 2235/722 (2013.01); C04B 2111/00793 (2013.01); C04B 2235/786 (2013.01); C04B 35/6263 (2013.01); B01J 35/04 (2013.01); F01N 3/2026 (2013.01); C04B 2235/96 (2013.01); C04B 2235/383 (2013.01); F01N 3/2828 (2013.01); C04B 2235/5436 (2013.01); C04B 2235/80 (2013.01); C04B 2235/767 (2013.01); B01J 32/00 (2013.01); C04B 2235/428 (2013.01); C04B 2235/3826 (2013.01); C04B 2235/3834 (2013.01); Y02T 10/26 (2013.01); C04B 2235/9607 (2013.01); C04B 35/565 (2013.01); C04B 35/6316 (2013.01); B01J 27/224 (2013.01); C04B 2235/606 (2013.01);
Abstract
A silicon carbide ceramic is provided which has a small amount of resistivity change due to changes in temperature and which is capable of generating heat by current application. The silicon carbide ceramic contains silicon carbide crystals having 0.1 to 25 mass % of 4H—SiC silicon carbide crystals and 50 to 99.9 mass % of 6H—SiC silicon carbide crystals, preferably having a nitrogen content of 0.01 mass % or less, more preferably containing two or more kinds of silicon carbide particles containing silicon carbide crystals and silicon for binding the silicon carbide particles to each other and having a silicon content of from 10 to 40 mass %.