The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2014
Filed:
Jun. 17, 2010
Michael J. Callahan, Hanson, MA (US);
Buguo Wang, Burlington, MA (US);
John S. Bailey, Temple, NH (US);
Michael J. Callahan, Hanson, MA (US);
Buguo Wang, Burlington, MA (US);
John S. Bailey, Temple, NH (US);
The United States of America As represented by the Secretary of the Air Force, Washington, DC (US);
Abstract
This invention provides a process for producing high-purity dense polycrystalline III-nitride slabs. A vessel which contains a group III-metal such as gallium or an alloy of group III-metals of shallow depth is placed in a reactor. The group III-metal or alloy is heated until a molten state is reached after which a halide-containing source mixed with a carrier gas and a nitrogen-containing source is flowed through the reactor vessel. An initial porous crust of III-nitride forms on the surface of the molten III-metal or alloy which reacts with the nitrogen-containing source and the halide-containing source. The flow rate of the nitrogen-containing source is then increased and flowed into contact with the molten metal to produce a dense polycrystalline III-nitride. The products produced from the inventive process can be used as source material for III-nitride single crystal growth which material is not available naturally.