The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2014

Filed:

Jun. 18, 2009
Applicants:

Florent Miller, Paris, FR;

Thierry Carriere, Triel sur Seine, FR;

Antonin Bougerol, Suresnes, FR;

Inventors:

Florent Miller, Paris, FR;

Thierry Carriere, Triel sur Seine, FR;

Antonin Bougerol, Suresnes, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/00 (2006.01); G11C 29/52 (2006.01); G11C 11/412 (2006.01); G11C 11/41 (2006.01);
U.S. Cl.
CPC ...
G11C 29/52 (2013.01); G11C 11/41 (2013.01); G11C 11/4125 (2013.01);
Abstract

To produce a memory which resists ion or photon attack, a memory structure is chosen whose memory point behaves asymmetrically with regard to these attacks. It is shown that in this case, it is sufficient to have a reference cell for an identical and periodic storage structure in order to be able to correct all the memory cells assailed by an attack. An error correction efficiency of ½ is thus obtained, with a simple redundancy, whereas the conventional methods make provision, for the same result, to triple the storage, to obtain a less beneficial efficiency of ⅓.


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