The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2014

Filed:

Mar. 06, 2012
Applicant:

Yu Higuchi, Anan, JP;

Inventor:

Yu Higuchi, Anan, JP;

Assignee:

Nichia Corporation, Anan-shi, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); B82Y 20/00 (2011.01); H01S 5/042 (2006.01); H01S 5/183 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01S 5/18341 (2013.01); H01S 5/0425 (2013.01); H01S 5/18325 (2013.01); B82Y 20/00 (2013.01); H01S 5/34333 (2013.01); H01S 5/18327 (2013.01);
Abstract

Disclosed is a surface emitting laser element capable of reducing threshold current. A surface emitting laser element according to an embodiment includes a semiconductor portion having a first semiconductor layer and a second semiconductor layer, a first reflector disposed at the first semiconductor layer side of the semiconductor portion, and a second reflector disposed at the second semiconductor layer side of the semiconductor portion. Particularly includes a second electrode disposed between the second semiconductor layer and the second reflector and connected to the second semiconductor layer, a connecting electrode disposed laterally around the second reflector and connected to the second electrode, and a current confinement portion disposed between the second semiconductor layer and the connecting electrode and capable of reflecting light from the semiconductor portion.


Find Patent Forward Citations

Loading…